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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 1.5 0.25 MAX. 1750 850 5 8 100 1.0 0.6 UNIT V V A A W V A s Tmb 25 C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.3 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1750 850 5 8 3 5 100 4 100 150 150 UNIT V V A A A A mA A W C C average over any 20ms period Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 1.25 UNIT K/W K/W September 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFE PARAMETER Collector cut-off current 1 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = 1500 V VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 12 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 1.5 A; IB = 0.3 A IC = 1.5 A; IB = 0.3 A IC = 5 mA; VCE = 10 V IC = 400 mA; VCE = 3 V IC = 1.5 A; VCE = 1 V MIN. 750 8 12 5 TYP. 18 7 MAX. 1.0 20 2.0 1 1.0 1.3 35 - UNIT mA A mA mA V V V Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ton ts tf PARAMETER Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 1.5 A; IBon = -IBoff = 0.3 A TYP. 1.1 5 0.75 MAX. 1.5 6.5 1.0 UNIT s s s s s s s ICon = 1.5 A; IBon = 0.3 A; LB = 1 H; -VBB = 5 V ICon = 1.5 A; IBon = 0.3 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 2.0 0.25 3.0 0.6 2.2 0.2 3.3 0.7 IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A VCC VCC RL VIM 0 tp T -VBB LC RB T.U.T. IBend VCL LB T.U.T. CFB Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon Fig.6. Test Circuit RBSOA. VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL 1500 V; LB = 1 H 90 % 90 % ICon 90 % IC IC 10 % ts ton toff IBon 10 % tr 30ns -IBoff tf 10 % ts toff IB IBon t -IBoff tf t IB Fig.4. Switching times waveforms with resistive load. Fig.7. Switching times waveforms with inductive load. VCC 120 110 100 90 80 PD% Normalised Power Derating LC 70 60 50 IBon LB T.U.T. 40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 -VBB Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LB = 1 uH Fig.8. Normalised power dissipation. PD% = 100PD/PD 25 C = f (Tmb) September 1997 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A 1E+01 Zth / (K/W) BU1706A 1.2 1.1 VBESAT / V Tj = 25 C Tj = 125 C BU1706A 1E+00 0.5 0.2 0.1 0.05 0.02 1 0.9 P D tp 1E-01 D= tp T t 0.8 0.7 0.6 IC = 3A 2A 1.5 A 0.5 A 0 1 2 IB / A 3 4 1E-02 D=0 1E-03 1E-07 T 1E-05 1E-03 t/s 1E-01 1E+01 Fig.9. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VBESAT / V BU1706A Fig.12. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC VCESAT / V BU1706A 1.2 1.1 1 0.9 0.8 10 Tj = 25 C Tj = 125 C 1 2A 3A IC/IB = 0.7 0.6 0.5 0.4 0.1 1 IC / A 4 5 6 0.01 0.01 0.1 IC = 0.5A 1.5 A Tj = 25 C Tj = 125 C 10 0.1 IB / A 1 10 Fig.10. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB VCESAT / V IC/IB = 6 5 4 BU1706A Fig.13. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC h FE 5V BU1706A 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 100 10 1V Tj = 25 C Tj = 125 C Tj = 25 C 1 Tj = 125 C 0.1 1 IC / A 10 0.1 0.01 0.1 IC / A 1 10 Fig.11. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB Fig.14. Typical DC current gain. hFE = f(IC); parameter VCE September 1997 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A IC / A 10 I CM 6 5 IC / A BU1706A I CDC 4 3 2 1 P tot 1 0 0 400 tp = 800 1200 VCE / V 1600 2000 Fig.16. Reverse bias safe operating area. Tj Tjmax 0.1 100 us 1 ms 10 ms DC 0.01 1 10 VCE / V 100 1000 Fig.15. Forward bias safe operating area. Tmb = 25 C I II NB: Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. September 1997 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.000 |
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